advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 600v lower gate charge r ds(on) 8 simple drive requirement i d 1.6a rohs compliant description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a e ar repetitive avalanche energy mj t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 3.2 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice maximum thermal resistance, junction-ambient (pcb mount) 4 200807222 halogen-free product storage temperature range -55 to 150 6 39 linear derating factor 0.31 0.5 1.6 1 parameter rating 600 1 ap02n60h/j-hf 64 -55 to 150 parameter 1.6 + 30 the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for ac/dc converters. the through-hole version (ap02n60j) is available for low-profile applications. g d s to-251(j) g d s to-252(h) g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 600 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.6 - v/ : r ds(on) static drain-source on-resistance v gs =10v, i d =1a - - 8 ?
ap02n60h/j-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =1a v g =10v 0 0.5 1 1.5 0 5 10 15 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 6.0v 5.5v 5.0v v g = 4.5 v 0 0.3 0.6 0.9 0 5 10 15 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 6.0v 5.5v 5.0v v g = 4.5 v 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j = 150 o c t j = 25 o c 1 2 3 4 5 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap02n60h/j-hf t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 4 8 12 16 0 4 8 12 16 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =1.6a v ds =320v v ds =400v v ds =480v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 sin g le pulse 0.01 0.1 1 10 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc
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